PART |
Description |
Maker |
MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system TMOS POWER FET 3.0 AMPERES 600 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
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MOTOROLA[Motorola, Inc] ON Semiconductor
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MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 600 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTV6N100E MTV6N100E_D ON2675 MTV6N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RDSon)\u003d 3.0欧姆
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ON Semiconductor Motorola, Inc Motorola Mobility Holdings, Inc.
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MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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MOTOROLA[Motorola, Inc] Motorola, Inc. ON SEMICONDUCTOR
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MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
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Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
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MTB15N06V MTB15N06V_D ON2395 MTB15N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 15 AMPERES 60 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTP12P10 MTP12P10_D ON2547 |
From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM
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MOTOROLA[Motorola, Inc] ON Semi
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MTSF1P02HD ON2655 |
SINGLE TMOS POWER MOSFET SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM From old datasheet system
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Motorola, Inc. MOTOROLA[Motorola, Inc]
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MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培RDS(on)\u003d 0.080欧姆 From old datasheet system TMOS V Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
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Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
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MMDF2C03HD ON2158 MMDF2C03HD-D |
Complementary TMOS Field Effect Transistors COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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